Product Summary
The TF202C-E5-TL-H is an N-channel Silicon Junction FET. It is suitable for Electret Condenser Microphone Applications.
Parametrics
TF202C-E5-TL-H absolute maximum ratings: (1)Gate-to-Drain Voltage, VGDO: -20 V; (2)Gate Current, IG: 10 mA; (3)Drain Current, ID: 1mA; (4)Allowable Power Dissipation, PD: 100 mW; (5)Junction Temperature, Tj: 150℃; (6)Storage Temperature, Tstg: -55 to +150℃.
Features
TF202C-E5-TL-H features: (1)Especially suited for use in electret condenser microphone for audio equipments and telephones; (2)Ultrasmall package permitting applied sets to be small and slim; (3)Excellent voltage characteristics; (4)Excellent transient characteristics; (5)Adoption of FBET process.
Diagrams
TF20 1 5% |
IRC |
Metal Film Resistors - Through Hole 1/2 WATT 1 OHM 5% |
Data Sheet |
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TF20 2 5% |
IRC |
Metal Film Resistors - Through Hole 1/2 WATT 2 OHM 5% |
Data Sheet |
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TF20 3.9 5% |
IRC |
Metal Film Resistors - Through Hole 1/2 WATT 3.9 OHM 5% |
Data Sheet |
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TF20 6.49 1%TR |
IRC |
Metal Film Resistors - Through Hole 1/2 WATT 6.49 OHM 1% |
Data Sheet |
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TF2000 |
Other |
Data Sheet |
Negotiable |
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TF2006 5M 1% 100PPM |
THICK FILM RESISTOR 5M .7W 1% |
Data Sheet |
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