(China (Mainland))
Product Summary
The MJE350G is a plastic medium power PNP silicon transistor. The MJE350G is designed for use in lineoperated applications such as low power, line operated series series pass and switching regulators requiring PNP capability.
Parametrics
MJE350G absolute maximum ratings: (1)Collector-Emitter Voltage VCEO: 300 Vdc; (2)Emitter-Base VoltageVEB: 3.0 Vdc; (3)Collector Current - Continuous lc: 500 mAdc; (4)Total Power Dissipation @ Tc = 25℃ Derate above 25° C PD: 20W; (5)0.16 mW/℃; (6)Operating and Storage Junction Temperature Range TJ, Tstg: -65 to +150 ℃; (7)Thermal Resistance, Junction-to-Case OJC: 6.25 ℃/W.
Features
MJE350G features: (1)High Collector-Emitter Sustaining Voltage -VCEO(sus) = 300 Vdc ＠ IC= 1.0 mAdc; (2)Excellent DC Current Gain -hFE = 30-240 ＠ IC= 50 mAdc; (3)Plastic Thermopad Package; (4)Pb-Free Package is Available.
Diagrams
| Image | Part No | Mfg | Description |  |
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 MJE350G |
ON Semiconductor |
Transistors Bipolar (BJT) 0.5A 300V 20W PNP |
Data Sheet |
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