(China (Mainland))
Product Summary
The 2SA1015-GR is a PNP Silicon Plastic-Encapsulate Transistor. It is suitable for Audio Frequency Amplifier Applications and Low Noise Amplifier Applications.
Parametrics
2SA1015-GR absolute maximum ratings: (1)Collector-base voltage:-50 V ; (2)Collector-emitter voltage:-50 V ; (3)Emitter-base voltage:-5 V ; (4)Collector current:-150 mA ; (5)Base current:-50 mA ; (6)Collector power dissipation (Tc = 25℃) :400 W ; (7)Junction temperature:125℃; (8)Storage temperature range:-55 to 125℃.
Features
2SA1015-GR features: (1)High voltage and high current: VCEO= -50 V (min), IC= -150 mA(max) ; (2)Excellent hFElinearity: hFE(2) = 80 (typ.) at VCE= -6 V, IC= -150 mA: hFE(IC= -0.1mA)/hFE(IC= -2 mA) = 0.95 (typ.) ; (3)Low noise: NF = 0.2dB (typ.) (f = 1kHz) ; (4)Complementary to 2SC1815 (L).
Diagrams
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 2SA1015-GR |
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Data Sheet |
Negotiable |
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2SA1015-GR(F,T) |
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TRANS PNP 50V 150MA TO-92 |
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2SA1015-GR(TE2,F,T) |
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TRANS PNP 50V 150MA TO-92 |
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