Product Summary

The MJE350G is a plastic medium power PNP silicon transistor. The MJE350G is designed for use in lineoperated applications such as low power, line operated series series pass and switching regulators requiring PNP capability.


Parametrics

MJE350G absolute maximum ratings: (1)Collector-Emitter Voltage VCEO: 300 Vdc; (2)Emitter-Base VoltageVEB: 3.0 Vdc; (3)Collector Current - Continuous lc: 500 mAdc; (4)Total Power Dissipation @ Tc = 25℃ Derate above 25° C PD: 20W; (5)0.16 mW/℃; (6)Operating and Storage Junction Temperature Range TJ, Tstg: -65 to +150 ℃; (7)Thermal Resistance, Junction-to-Case OJC: 6.25 ℃/W.

Features

MJE350G features: (1)High Collector-Emitter Sustaining Voltage -VCEO(sus) = 300 Vdc ＠ IC= 1.0 mAdc; (2)Excellent DC Current Gain -hFE = 30-240 ＠ IC= 50 mAdc; (3)Plastic Thermopad Package; (4)Pb-Free Package is Available.

Diagrams

MJE350G dimension

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
MJE350G
MJE350G
ON Semiconductor
Transistors Bipolar (BJT) 0.5A 300V 20W PNP
Data Sheet
0-1: $0.29
1-25: $0.25
25-100: $0.18
100-500: $0.15
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
MJE3055
MJE3055
Other

Data Sheet
Negotiable 
MJE3055TG
MJE3055TG
ON Semiconductor
Transistors Bipolar (BJT) 10A 60V 125W NPN
Data Sheet
0-1: $0.55
1-25: $0.44
25-100: $0.34
100-500: $0.30
MJE3055TTU_Q
MJE3055TTU_Q
Fairchild Semiconductor
Transistors Bipolar (BJT)
Data Sheet
Negotiable 
MJE340STU
MJE340STU
Fairchild Semiconductor
Transistors Bipolar (BJT) NPN Epitaxial Sil
Data Sheet
0-1: $0.27
1-25: $0.23
25-100: $0.19
100-250: $0.15
MJE3439
MJE3439
ON Semiconductor
Transistors Bipolar (BJT) 0.3A 350V 15W NPN
Data Sheet
Negotiable 
MJE3439G
MJE3439G
ON Semiconductor
Transistors Bipolar (BJT) 0.3A 350V 15W NPN
Data Sheet
0-1: $0.31
1-25: $0.24
25-100: $0.21
100-500: $0.18