Product Summary

The IRFU9024N is a power MOSFET. The IRFU9024N from International Rectifier utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that the IRFU9024N is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Parametrics

IRFU9024N absolute maximum ratings: (1)ID ＠ TC = 25°C Continuous Drain Current, VGS ＠ -10V: -11A; (2)ID @ TC = 100°C Continuous Drain Current, VGS ＠ -10V: -8 A; (3)IDM Pulsed Drain Current: -44A; (4)PD @TC = 25°C Power Dissipation:38 W; (5)Linear Derating Factor: 0.30 W/°C; (6)VGS Gate-to-Source Voltage: ± 20 V; (7)EAS Single Pulse Avalanche Energy: 62 mJ; (8)IAR Avalanche Current: -6.6 A; (9)EAR Repetitive Avalanche Energy: 3.8 mJ; (10)dv/dt Peak Diode Recovery dv/dt: -10 V/ns; (11)TJ Operating Junction and Storage Temperature Range: -55 to + 150°C; (12)Soldering Temperature, for 10 seconds: 300°C (1.6mm from case ).

Features

IRFU9024N features: (1)Ultra Low On-Resistance; (2)P-Channel; (3)Surface Mount (IRFR9024N); (4)Straight Lead (IRFU9024N); (5)Advanced Process Technology; (6)Fast Switching; (7)Fully Avalanche Rated.

Diagrams

IRFU9024N pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRFU9024N
IRFU9024N

MOSFET P-CH 55V 11A I-PAK
Data Sheet
0-600: $0.46
IRFU9024NPBF
IRFU9024NPBF
International Rectifier
MOSFET MOSFT P-Ch -55V -11A 175mOhm 12.7nC
Data Sheet
0-1: $0.65
1-25: $0.38
25-100: $0.23
100-250: $0.22