Product Summary
The IRFP440 is a power MOSFET. The IRFP440 provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-22G devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. The IRFP440 also provides greater creepage distance between pins to meet the requirements of most safety specifications.
Parametrics
IRFP440 absolute maximum ratings: (1)id @ tc = 25℃ continuous drain current, vgs @ 10 v: 8.8 A; (2)id @ tc = 100℃ continuous drain current, vgs @ 10 v: 5.6A; (3)i dm pulsed drain current: 35 w; (4)pd @ tc = 25℃ power dissipation: 150 w; (5)pd @ tc = 25℃ linear derating factor: 1.2 w/℃; (6)vgs gate-to-source voltage: ±20 v; (7)eas single pulse avalanche energy: 480 mj; (8)iar avalanche current: 8.8 A; (9)ear repetitive avalanche energy: 15 mj; (10)dv/dt peak diode recovery dv/dt d>: 3.5 v/ns; (11)tj operating junction and: -55 to+150℃.
Features
IRFP440 features: (1)Repetitive Avalanche Rated; (2)Isolated Central Mounting Hole; (3)Fast Switching; (4)Ease of Paralleling; (5)Simple Drive Requirements.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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IRFP440 |
Vishay/Siliconix |
MOSFET N-Chan 500V 8.8 Amp |
Data Sheet |
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IRFP440, SiHFP440 |
Other |
Data Sheet |
Negotiable |
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IRFP440PBF |
Vishay/Siliconix |
MOSFET N-Chan 500V 8.8 Amp |
Data Sheet |
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IRFP440B |
Fairchild Semiconductor |
MOSFET 500V N-Channel B-FET |
Data Sheet |
Negotiable |
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IRFP440_R4943 |
Fairchild Semiconductor |
MOSFET TO-247 |
Data Sheet |
Negotiable |
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