IRF520N

international rectifier, TO-220, Fast Switching, 0.32 W, 6.8 A, 4.8 mJ, Advanced Process Technology

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Price:: US $0.34~0.39 / piece [Get Latest Price]

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	US $0.34~0.39

PartNumber:: IRF520N

Brand:: International Rectifier - IR | Pack: TO | D/C: 10+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2011-09-23

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Part Number:IRF520N
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Product Summary

The IRF520N is a international rectifier. Fifth Generation HEXFET IRF520N from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFET IRF520N is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Parametrics

IRF520N absolute maximum ratings: (1)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V: 9.7; (2)ID @ TC = 100℃ Continuous Drain Current, VGS @ 10V: 6.8 A; (3)IDM Pulsed Drain Current: 38; (4)PD @TC = 25℃ Power Dissipation: 48 W; (5)Linear Derating Factor: 0.32 W/℃; (6)VGS Gate-to-Source Voltage: ± 20 V; (7)EAS Single Pulse Avalanche Energy: 91 mJ; (8)IAR Avalanche Current: 5.7 A; (9)EAR Repetitive Avalanche Energy: 4.8 mJ; (10)dv/dt Peak Diode Recovery dv/dt: 5.0 V/ns; (11)TJ Operating Junction and: -55 to + 175℃.

Features

IRF520N features: (1)Advanced Process Technology; (2)Dynamic dv/dt Rating; (3)175℃ Operating Temperature; (4)Fast Switching; (5)Fully Avalanche Rated.