(China (Mainland))
Product Summary
The FDA18N50 is an N-Channel MOSFET. The FDA18N50 is produced using Fairchild proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The FDA18N50 is well suited for high efficient switched mode power supplies and active power factor correction.
Parametrics
FDA18N50 absolute maximum ratings: (1)VDSS Drain-Source Voltage: 500 V; (2)ID Drain Current - Continuous (TC = 25℃): 19 A, Continuous (TC = 100℃): 11.4A; (3)IDM Drain Current - Pulsed: 76 A; (4)VGSS Gate-Source voltage: ±30 V; (5)EAS Single Pulsed Avalanche Energy: 945 mJ; (6)IAR Avalanche Current: 19 A; (7)EAR Repetitive Avalanche Energy: 23 mJ; (8)dv/dt Peak Diode Recovery dv/dt: 4.5 V/ns; (9)PD Power Dissipation (TC = 25℃): 239W, Derate above 25℃: 1.92W/℃; (10)TJ, TSTG Operating and Storage Temperature Range: -55 to +150 ℃; (11)TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds: 300 ℃.
Features
FDA18N50 features : (1)19A, 500V, RDS(on) = 0.265 Ω@VGS = 10 V; (2)Low gate charge ( typical 45 nC); (3)Low Crss ( typical 25 pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability.
Diagrams
| Image | Part No | Mfg | Description |  |
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 FDA18N50 |
Fairchild Semiconductor |
MOSFET 500V N-CH MOSFET |
Data Sheet |
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| Image | Part No | Mfg | Description | |
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Fairchild Semiconductor |
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Data Sheet |
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Fairchild Semiconductor |
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FDA16N50_F109 |
Fairchild Semiconductor |
MOSFET 500V 16.5A NCH |
Data Sheet |
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FDA18N50 |
Fairchild Semiconductor |
MOSFET 500V N-CH MOSFET |
Data Sheet |
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