Product Summary

The 2SD1000 is a NPN silicon epitaxial transistor power mini mold.

Parametrics

2SD1000 absolute maximum ratings: (1)Collector-base voltage VCBO: 60 V; (2)Collector-emitter voltage VCEO: 50 V; (3)Emitter-base voltage VEBO: 5 V; (4)Collector current (DC) IC: 0.7 A; (5)Collector Current (pulse) IC: 1.0 A; (6)Total power dissipation PT: 2.0 W; (7)Junction temperature Tj: 150℃; (8)Storage temperature Tstg: -55 to +150℃.

Features

2SD1000 features: (1)World standard miniature package:SOT-89; (2)Low collector saturation voltage.

Diagrams

2SD1000 package diagram

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2SD1000
2SD1000

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Image Part No Mfg Description Data Sheet Download Pricing
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2SD1000
2SD1000

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