Product Summary
The 2SC5707 is an NPN Epitaxial Planar Silicon Transistor. Applications of the 2SC5707 include DC-DC converter, relay drivers, lamp drivers, motor drivers, strobes.
Parametrics
2SC5707 absolute maximum ratings: (1)Collector-to-Base Voltage: (-50)80V; (2)Collector-to-Emitter Voltage: (-50)80V; (3)Collector-to-Emitter Voltage: (-)50 V; (4)Emitter-to-Base Voltage: (-)6 V; (5)Collector Current: (-)8 A; (6)Collector Current (Pulse): (-)11 A; (7)Base Current: (-)2 A; (8)Collector Dissipation: 1.0 W, 1.5 W; (9)Junction Temperature: 150 ℃; (10)Storage Temperature: -55 to +150 ℃.
Features
2SC5707 features: (1)Adoption of FBET, MBIT process; (2)Large current capacitance; (3)Low collector-to-emitter saturation voltage; (4)High-speed switching; (5)High allowable power dissipation.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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2SC5707 |
Other |
Data Sheet |
Negotiable |
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2SC5707-E |
ON Semiconductor |
Transistors Bipolar (BJT) BIP NPN 8A 50V |
Data Sheet |
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2SC5707-TL-E |
TRANS NPN BIPO 8A 50V TP-FA |
Data Sheet |
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