Product Summary
The 2SC5706 is an epitaxial planar silicon high current switching transistor.
Parametrics
2SC5706 absolute maximum ratings: (1)collector-to-base voltage:(-50)80V; (2)collector-to-emitter voltage:(-50)80V; (3)collector-to-emitter voltage:(-)50V; (4)emitter-to-base voltage:(-)6V; (5)collector current:(-)5A; (6)collector current(pulse):(-)7.5A; (7)base current:(-)1.2A; (8)collector dissipation:0.8W; (9)junction temperature:150℃; (10)storage temperature:--55 to +150℃.
Features
2SC5706 features: (1)Adoption of FBET, MBIT process; (2)Large current capacitance; (3)Low collector-to-emitter saturation voltage; (4)High-speed switching; (5)High allowable power dissipation; (6)DC-DC converter, relay drivers, lamp drivers; (7)motor drivers, strobes.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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2SC5706 |
Other |
Data Sheet |
Negotiable |
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2SC5706-E |
ON Semiconductor |
Transistors Bipolar (BJT) BIP NPN 5A 50V |
Data Sheet |
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2SC5706-H |
ON Semiconductor |
Transistors Bipolar (BJT) BIP NPN 5A 50V |
Data Sheet |
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2SC5706-TL-E |
ON Semiconductor |
Transistors Bipolar (BJT) BIP NPN 5A 50V |
Data Sheet |
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2SC5706-TL-H |
ON Semiconductor |
Transistors Bipolar (BJT) BIP NPN 5A 50V |
Data Sheet |
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