(China (Mainland))
Product Summary
The 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. The 1N60 is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
Parametrics
1N60 absolute maximum ratings: (1)Drain-Source Voltage:600V; (2)Gate-Source Voltage:±30V; (3)Avalanche Current: 1.2A; (4)Continuous Drain Current:TC= 25℃:1.2A, TC= 100℃:0.76A; (5)Drain Current-Pulsed:4.8A; (6)Avalanche Energy:Repetitive:4.0mJ, Single Pulse:50mJ; (7)Peak Diode Recovery dv/dt: 4.5V/ns; (8)Total Power Dissipation:TC=25℃:40W, Derate above 25℃:0.32W/℃; (9)Junction Temperature:+150℃; (10)Storage Temperature:-55 to +150℃.
Features
1N60 features: (1)RDS(ON) =9.3Ω@VGS= 10V. ; (2)Ultra Low gate charge (typical 5.0nC) ; (3)Low reverse transfer capacitance (CRSS= typical 3.0 pF) ; (4)Fast switching capability ; (5)Avalanche energy specified ; (6)Improved dv/dt capability, high ruggedness.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 1N60 |
Other |
|
Data Sheet |
Negotiable |
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1N6000B |
Taiwan Semiconductor |
Zener Diodes 10 Volt 500mW 5% |
Data Sheet |
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1N6000B_T50A |
Fairchild Semiconductor |
Zener Diodes Zener Diode |
Data Sheet |
Negotiable |
|
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1N6000B_T50R |
Fairchild Semiconductor |
Zener Diodes Zener Diode |
Data Sheet |
Negotiable |
|
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|
1N6001B |
Taiwan Semiconductor |
Zener Diodes 11 Volt 500mW 5% |
Data Sheet |
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1N6001B_T50A |
Fairchild Semiconductor |
Zener Diodes Zener Diode |
Data Sheet |
Negotiable |
|
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|
1N6001B_T50R |
Fairchild Semiconductor |
Zener Diodes Zener Diode |
Data Sheet |
Negotiable |
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1N6002B_T50A |
Fairchild Semiconductor |
Zener Diodes Zener Diode |
Data Sheet |
Negotiable |
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