(China (Mainland))
Product Summary
The FM24CL64-G is a 64-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. The FM24CL64-G provides reliable data retention for 45 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories. The FM24CL64-G performs write operations at bus speed. No write delays are incurred. The next bus cycle may commence immediately without the need for data polling.
Parametrics
FM24CL64-G absolute maximum ratings: (1)VDD, Power Supply Voltage with respect to VSS: -1.0V to +5.0V; (2)VIN, Voltage on any pin with respect to VSS: -1.0V to +5.0V and VIN < VDD+1.0V; (3)TSTG, Storage Temperature: -55 to +125℃; (4)TLEAD, Lead Temperature (Soldering, 10 seconds): 300℃; (5)VESD, Electrostatic Discharge Voltage, Human Body Model (JEDEC Std JESD22-A114-B): 4KV; Machine Model (JEDEC Std JESD22-A115-A): 300V; (6)Package Moisture Sensitivity Level: MSL-1.
Features
FM24CL64-G features: (1)Organized as 8,192 x 8 bits; (2)Unlimited Read/Write Cycles; (3)45 year Data Retention; (4)NoDelay Writes; (5)Advanced High-Reliability Ferroelectric Process; (6)Up to 1 MHz maximum bus frequency; (7)Direct hardware replacement for EEPROM; (8)Supports legacy timing for 100 kHz & 400 kHz; (9)True 2.7V-3.6V Operation; (10)75 μA Active Current (100 kHz); (11)1 μA Standby Current; (12)Industrial Temperature -40 to +85℃; (13)8-pin SOIC and 8-pin DFN Packages; (14)Green Packaging Options.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 FM24CL64-G |
Ramtron |
F-RAM 64K (8Kx8) 2.7V |
Data Sheet |
Negotiable |
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FM24CL64-GTR |
Ramtron |
F-RAM 64K (8Kx8) 2.7V |
Data Sheet |
Negotiable |
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